egf1a, egf1b, egf1c, egf1d www.vishay.com vishay general semiconductor revision: 16-aug-13 1 document number: 88579 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount glass passivated ultrafast rectifier features ? superectifier structure for high reliability condition ? cavity-free glass- passivated junction ? ideal for automated placement ? ultrafast reverse recovery time ? low switching losses, high efficiency ? high forward surge capability ? meets environmental standard mil-s-19500 ? meets msl level 1, per j-st d-020, lf maximum peak of 250 c ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. mechanical data case: do-214ba, molded epoxy over glass body ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-e3 - rohs-co mpliant, commercial grade ? base p/nhe3 - rohs-compliant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 1.0 a v rrm 50 v, 100 v, 150 v, 200 v i fsm 30 a t rr 50 ns v f 1.0 v t j max. 175 c package do-214ba (gf1) diode variatio ns single die do-214ba (gf1) superectifier ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol egf1a egf1b egf1c egf1d unit device marking code ea eb ec ed maximum repetitive peak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 105 140 v maximum dc blocking voltage v dc 50 100 150 200 v maximum average forward rectified current at t l = 125 c i f(av) 1.0 a peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 30 a operating junction and storage temperature range t j , t stg - 65 to + 175 c
egf1a, egf1b, egf1c, egf1d www.vishay.com vishay general semiconductor revision: 16-aug-13 2 document number: 88579 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse test: 300 s pulse width, 1 % duty cycle note (1) thermal resistance from junction to ambien t and from junction to lead, pcb mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 ? c unless otherwise specified) fig. 1 - maximum forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol egf1a egf1b egf1c egf1d unit maximum instantaneous forward voltage 1.0 a v f (1) 1.0 v maximum dc reverse current ? at rated dc blocking voltage t a = 25 c i r (1) 5.0 a t a = 125 c 50 typical reverse recovery time i f = 0.5 a, i r = 1.0 a, ? i rr = 0.25 a t rr 50 ns typical junction capa citance 4.0 v, 1 mhz c j 15 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol egf1a egf1b egf1c egf1d unit typical thermal resistance r ? ja (1) 85 c/w r ? jl (1) 30 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode egf1d-e3/67a 0.104 67a 1500 7" diam eter plastic tape and reel egf1d-e3/5ca 0.104 5ca 6500 13" diameter plastic tape and reel egf1dhe3/67a (1) 0.104 67a 1500 7" diameter plastic tape and reel egf1dhe3/5ca (1) 0.104 5ca 6500 13" diameter plastic tape and reel 0 1.0 75 50 25 0 100 125 150 175 average forward rectified current (a) lead temperature (c) 0.5 resistive or inductive load p.c.b. mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas 0 5 10 15 20 25 30 1 100 10 number of cycles at 60 hz peak forward surge current (a) t j = t j max. 8.3 ms single half sine-wave
egf1a, egf1b, egf1c, egf1d www.vishay.com vishay general semiconductor revision: 16-aug-13 3 document number: 88579 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 instantaneous forward voltage (v) 0.01 0.1 10 1 100 instantaneous forward current (a) 1.8 t j = 150 c pulse width = 300 s 1 % duty cycle t j = 25 c 60 40 20 0 100 80 0.01 0.1 10 1 100 1000 percent of rated peak reverse voltage (%) instantaneous reverse leakage current (a) t j = 100 c t j = 150 c t j = 25 c reverse voltage (v) junction capacitance (pf) 0.1 10 1 100 20 10 30 40 50 60 70 0 t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 0.01 0.1 10 1 100 100 10 1 0.1 t - pulse duration (s) transient thermal impedance (c/w) 0.167 (4.24) 0.187 (4.75) 0.0065 (0.17) 0.015 (0.38) 0.030 (0.76) 0.060 (1.52) 0.196 (4.98) 0.226 (5.74) 0.094 (2.39) 0.114 (2.90) 0.100 (2.54) 0.118 (3.00) 0.040 (1.02) 0.066 (1.68) 0.098 (2.49) 0.108 (2.74) 0.006 (0.152) typ. do-214ba (gf1) 0.076 (1.93) max. 0.220 (5.58) ref. 0.060 (1.52) min. mounting pad layout cathode band 0.066 (1.68) min.
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